| abstract |
The present invention includes the steps of providing an original diamond surface and plasma etching the original diamond surface to remove material from the original surface by at least 2 nm to produce a plasma etched surface, maximum roughness depth is plasma etched at the location of the removed etched surface surface R q is following conditions: 1.5 of roughness R q of R q original surface of the plasma etched surface less than doubled, or R q plasma etched surface is less than 1 nm, satisfies at least one of, methods of making diamond surface. |