| abstract |
The present invention relates to the growth of nitride semiconductors applicable to many semiconductor devices such as diodes, LEDs and transistors. According to the method of the present invention, nitride semiconductor nanowires are grown using chemical vapor deposition (CVD) based techniques for growing selected regions. During the nanowire growth process, there are a nitrogen source and an organometallic source, and at least the flow rate of the nitrogen source is continuously present during the nanowire growth process. The V / III ratio utilized in the method of the present invention is generally substantially lower than the V / III ratio associated with nitride-based semiconductor growth. |