http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010510661-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0083 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 |
| filingDate | 2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010510661-A |
| titleOfInvention | Light extraction diode (LED) with high light extraction efficiency by multiple extractors |
| abstract | (Al, In, Ga) N and ZnO direct wafer junction light emitting diodes (LEDs) are combined with a second light extractor that serves as an additional light extraction method. This second light extraction method aims to extract light that has not been extracted by the ZnO structure, more specifically, light that is captured by the (Al, In, Ga) N layer. This second method uses a photonic crystal that functions as a surface patterning or texturing or diffraction grating and is suitable for extraction from a thin film. The combination of both the ZnO structure and the second light extraction method makes it possible to extract most of the emission from the LED. In a more general extension of the invention, the ZnO structure can be replaced by another material to achieve additional light extraction. In another extension, to achieve additional light extraction, the (Al, In, Ga) N layer can be replaced by a structure containing components of other materials. |
| priorityDate | 2006-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.