http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010287906-A

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filingDate 2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010287906-A
titleOfInvention Semiconductor device
abstract When a channel doping method is used to control a threshold voltage, an impurity is introduced into an active layer, so that inevitably a bulk crystal defect caused by the impurity or an interface position between a semiconductor layer and an insulating layer is inevitably caused. It will cause it. As a result, TFT characteristics, particularly field effect mobility, are deteriorated. A crystalline semiconductor film having a product of a stress and a film thickness of a first insulating layer provided on an electrode formed on a substrate and a tensile stress provided on the first insulating layer. The threshold voltage is controlled by setting the product of the stress and film thickness of the active layer and the product of the stress and film thickness of the second insulating layer provided on the active layer to an appropriate magnitude. [Selection] Figure 4
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Total number of triples: 22.