http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010283350-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe950d708c7cd3395969c85dcbe67c67 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2010-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e2b6319970419c62764a95a4f0e220d |
| publicationDate | 2010-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010283350-A |
| titleOfInvention | Rare earth enhanced high electron mobility transistor and manufacturing method thereof |
| abstract | A HEMT is provided that prevents escape of charge carriers from a semiconductor active region and exhibits more effective confinement of charge carriers. A high electron mobility transistor (HEMT) 200A having a first group III-V intrinsic layer 209a doped with a rare earth additive, the second group III formed on the intrinsic layer. A Group V-V intrinsic layer 210a and a Group III-V semiconductor layer 220 formed on the second Group III-V intrinsic layer are also provided. In the HEMT manufacturing method, a first III-V intrinsic layer 209a is formed, and a rare earth additive is doped into the first III-V intrinsic layer to form an insulating layer. Further, a second group III-V intrinsic layer 210a is formed on the insulating layer, and a group III-V semiconductor layer 220 is formed on the second group III-V intrinsic layer. A two-dimensional electron gas (2DEG) 212 is formed at the heterojunction interface between the III-V semiconductor layer and the second III-V intrinsic layer. [Selection] Figure 2A |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014120731-A |
| priorityDate | 2009-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.