http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010280020-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2009-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbe6ca4e722f2e85a80118066fbab6de |
| publicationDate | 2010-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010280020-A |
| titleOfInvention | Cerium oxide abrasive and method of polishing a substrate using the abrasive |
| abstract | PROBLEM TO BE SOLVED: To provide a cerium oxide abrasive capable of reducing the generation of scratches while maintaining an appropriate polishing rate and precisely polishing a semiconductor surface, and a substrate polishing method using this abrasive. A cerium oxide particle obtained by pulverizing a cerium oxide obtained by firing a mixture of cerium carbonate and glycolic acid, and water, and a median secondary particle diameter of the cerium oxide is 0.1 to A cerium oxide abrasive that is 1 μm. Moreover, the cerium oxide abrasive | polishing agent whose mixing ratio of glycolic acid is 1-12 mol with respect to 1 mol of cerium carbonate. Furthermore, the cerium oxide abrasive | polishing agent whose secondary particle diameter is 3 micrometers or more cerium oxide particle content is 500 ppm or less in solid. [Selection figure] None |
| priorityDate | 2009-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.