http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010278470-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c6a9fd6219b32cd3893a49979951bf4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6506300a23c7893d30a5e4208001b645
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
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filingDate 2010-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03563daf5de7a9c0eadcb026879453c8
publicationDate 2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010278470-A
titleOfInvention Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor device, group III nitride semiconductor free-standing substrate, and methods of manufacturing the same
abstract A group III nitride semiconductor epitaxial substrate having good crystallinity not only in AlGaN, GaN, and GaInN having a growth temperature of 1050 ° C. or lower, but also in Al x Ga 1-x N having a high Al composition and a high growth temperature, group III Provided are a nitride semiconductor device, a group III nitride semiconductor free-standing substrate, a group III nitride semiconductor growth substrate for manufacturing them, and a method for efficiently manufacturing them. A crystal growth substrate comprising at least a group III nitride semiconductor containing Al and a scandium nitride film formed on the surface portion. [Selection] Figure 1
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priorityDate 2009-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 29.