| abstract |
The number of photomasks used in photolithography is reduced. A first film is formed, a first resist mask is formed on the first film by a photolithography method, and a first layer having a predetermined pattern is formed using the first resist mask. The first resist mask is removed, a second film is formed, and a second resist mask is formed on the second film by a photolithography method using the same photomask as the first resist mask. Then, the second resist mask is reduced to form a third resist mask, and a second layer having a predetermined pattern is formed using the third resist mask. [Selection] Figure 1 |