http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010278275-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate | 2009-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d533b1a710bf8bd1775fb56c029cfe2 |
| publicationDate | 2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010278275-A |
| titleOfInvention | Semiconductor memory device |
| abstract | The present invention reduces the resistance of an LDD on the resistance element side while maintaining hot carrier resistance, thereby increasing the driving capability of a transistor and enabling high-speed operation. A gate electrode formed on a semiconductor substrate via a gate insulating film, a first LDD diffusion layer formed on the semiconductor substrate on one side of the gate electrode, and the gate electrode. 13, the second LDD diffusion layer 15 formed on the semiconductor substrate 11 on the other side, the first diffusion layer 18 formed on the one side of the gate electrode 13 via the first LDD diffusion layer 14, and the gate electrode A selection transistor 2 having a second diffusion layer 19 formed on the other side of the first LDD diffusion layer 15 and a storage element 3 connected to the first diffusion layer 18, and the first LDD diffusion layer 14 has a lower electrical resistance in the channel length direction than the second LDD diffusion layer 15. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102146588-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120065933-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012049789-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9112149-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101984308-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012142543-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011091317-A |
| priorityDate | 2009-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 63.