| abstract |
In a semiconductor device having a solder joint layer on a surface electrode, it is possible to suppress the occurrence of wafer warpage and cracks in the solder joint layer in the manufacturing process. A surface electrode is formed as an Al—Si layer or an Al—Si—Cu layer by sputtering at a substrate temperature of 250 ° C. or less as a first layer in contact with a semiconductor substrate, and as a second layer laminated on the surface. An Al layer or an Al—Cu layer is formed by sputtering at a substrate temperature of 400 ° C. or higher, and a solder joint layer and a solder layer are formed on the surface side of the Al layer or Al—Cu layer. Since the first layer is formed at a substrate temperature of 250 ° C. or lower, generation of silicon nodules can be prevented, and since the second layer is formed at a substrate temperature of 400 ° C. or higher, the flatness of the second layer can be secured. Wafer warpage and cracks in the solder joint layer can be prevented. [Selection] Figure 2 |