http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010272888-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80 |
| filingDate | 2010-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee89c506493ff4561ff29bb9b525299d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_860ae5e35e5935ed3ee9118d6fc69183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04dd618f5666a122112af8cdbe0e43d8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2e3f64c0684ecb3cba3deaa1b086a92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6030b5a0c7ea057733dff3f5f640f9b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddb185cc0633557238516b17d2e2f5dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_736a31c1f4120fba3985a4b8b9a3319b |
| publicationDate | 2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010272888-A |
| titleOfInvention | Group 3-5 compound semiconductor |
| abstract | A structure in which a conductive material having a specific pattern shape that can be used as an embedded electrode in a nitride-based compound semiconductor is realized, and a device such as SIT can be manufactured. (1) A first 3- X represented by a general formula In x Ga y Al z N (where x + y + z = 1, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1). A group 5 compound semiconductor, (2) SiO 2 that covers a part of the surface of the first group 3-5 compound semiconductor in a specific pattern shape in contact therewith , and (3) is laminated in contact with the SiO 2 a conductive material, covers both the (4) the SiO 2 and the exposed portion of the group III-V compound semiconductor surface of the first that is not coated with a laminate of a conductive material and electrically conductive material A second group 3-5 compound semiconductor represented by the general formula In u Ga v Al w N (where u + v + w = 1, 0 ≦ u ≦ 1, 0 ≦ v ≦ 1, 0 ≦ w ≦ 1) Do Ri, group III-V compound semiconductor layer thickness of the conductive material, characterized in der Rukoto than 100nm or less 5 nm. [Selection] Figure 1 |
| priorityDate | 1999-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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