| abstract |
A technique capable of realizing electrical inspection of a semiconductor integrated circuit device having a test pad with a narrow pitch is provided. A part of a metal film 21A, 21B formed by sequentially laminating a rhodium film and a nickel film is a probe 7A, 7B formed in a quadrangular pyramid shape or a quadrangular pyramid shape, and a wiring 23 and a metal film 21A are formed. , 21B electrically connect the wiring 23 and the metal films 21A and 21B through the through hole 24 formed in the polyimide film, and the plane pattern of the metal film 21B on which the probe 7B is formed and the through hole 24 is The planar pattern of the metal film 21A on which the probe 7A is formed and the through hole 24 is a pattern rotated by 180 °. [Selection] Figure 6 |