| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2010-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_896132a9b7bc95fc32fbb59ca9848661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_724c4774eab4f2c891fd7bcd10ea15bd |
| publicationDate |
2010-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010258473-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To provide a method for producing a resist pattern, a method for removing a resist pattern, and a method for producing a semiconductor device for the purpose of improving the utilization efficiency of a resist material and reducing the production cost. The invention includes a step of forming a resist pattern by discharging a composition containing a photosensitive agent onto a workpiece under reduced pressure. Etching the workpiece using the resist pattern as a mask; or irradiating the resist pattern with light in a photosensitive wavelength region of the photosensitive agent through a photomask; and using the resist pattern as a mask Etching the workpiece, and removing the resist pattern on the workpiece. [Selection] Figure 1 |
| priorityDate |
2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |