| abstract |
The present invention provides a polysiloxane-based photocurable composition having photopolymerizability and lithography properties and further having excellent insulating properties. It is useful as a passivation film and a gate insulating film of a thin film transistor. A polysiloxane compound having a photopolymerizable functional group and a SiH group in the same molecule and having a polysiloxane structure having a polyhedral skeleton formed from 6 to 24 Si atoms, an alkenyl group A photocurable composition comprising a compound having a photopolymerization initiator, a hydrosilylation catalyst. [Selection figure] None |