http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010251452-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2009-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cc2f4c0c2ae88a92ad587e0ac0a06f7 |
| publicationDate | 2010-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010251452-A |
| titleOfInvention | Film forming apparatus and film forming method |
| abstract | A novel film forming apparatus and a film forming method are provided. A film forming apparatus according to an embodiment includes a gas introduction pipe provided with a source gas jet port, a substrate arrangement place where a substrate on which a source material in the source gas is deposited, and the jet port. And a deposition member, which is disposed between the substrate arrangement place and deposits at least a part of impurities contained in the source gas, is provided in the processing chamber. In the film forming method according to the present embodiment, a source gas is introduced into a processing chamber, and at least a part of impurities contained in the source gas is deposited on a deposition member before reaching the substrate, and the source material is deposited on the substrate. Deposit raw material in gas. [Selection] Figure 1A |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017079289-A |
| priorityDate | 2009-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.