http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010235322-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcd881cc873029026668e68d47957fa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-037 |
| filingDate | 2009-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2981a6f29f087580664ed1cb16ed2463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_983569352aec5267619c91c1145bbf6e |
| publicationDate | 2010-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010235322-A |
| titleOfInvention | Method for producing polycrystalline silicon ingot |
| abstract | To provide a method for producing a high-purity polycrystalline silicon ingot from polycrystalline silicon produced by a zinc reduction method and then taken out of a reaction apparatus. SOLUTION: Polycrystalline silicon produced by a zinc reduction method is melted at 1410 to 1600 ° C. under a pressure of 10 −1 Pa or less while supplying argon gas containing water vapor to the atmosphere to obtain molten silicon. A method for producing a polycrystalline silicon ingot, comprising: a melting step; and a cooling step of cooling and crystallizing the molten silicon in order from the bottom to obtain a polycrystalline silicon ingot. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103601357-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114735708-A |
| priorityDate | 2009-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.