http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010235321-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02
filingDate 2009-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_983569352aec5267619c91c1145bbf6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2981a6f29f087580664ed1cb16ed2463
publicationDate 2010-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010235321-A
titleOfInvention Method for melting polycrystalline silicon
abstract Disclosed is a method for melting polycrystalline silicon, which can shorten the melting time of dendritic, needle-like or plate-like polycrystalline silicon produced by a zinc reduction method. A melting vessel is charged with dendritic, needle-like or plate-like polycrystalline silicon produced by a zinc reduction method, and lump silicon obtained by crushing a silicon ingot, and then the filler is filled with 1410. A method for melting polycrystalline silicon, comprising heating at ˜1600 ° C. to melt the filler. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015107917-A
priorityDate 2009-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.