| abstract |
A semiconductor device having a nitride semiconductor layer is manufactured at low cost. A sacrificial layer forming step of forming a sacrificial layer of a first nitride semiconductor on a substrate, a second nitride semiconductor layer formed on the sacrificial layer, and on the second nitride semiconductor layer Forming a laminated nitride semiconductor layer having a nitride semiconductor layer laminated thereon, and etching the second nitride semiconductor layer and the laminated nitride semiconductor layer until the surface of the sacrificial layer is exposed. Forming a trench, and forming a connection electrode on the surface of the trench and the laminated nitride semiconductor layer; immersing the substrate on which the connection electrode is formed in an electrolyte; The above-described problem is solved by a method for manufacturing a semiconductor device, comprising: a sacrificial layer removing step of applying a potential to the connection electrode, removing the sacrificial layer, and peeling the substrate. [Selection] Figure 6 |