http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010226130-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9a9aad45e5465bd5d3e7e503b2b16c65 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2010-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47adc91199be9fb31fb7eac10800b1e5 |
| publicationDate | 2010-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010226130-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A semiconductor device capable of improving the characteristics of a capacitor covered with an interlayer insulating film and a method for manufacturing the same are provided. A first interlayer insulating film (first insulating film) 11 formed above a silicon substrate (semiconductor substrate) 1, a lower electrode 16a formed on the first interlayer insulating film 11, and a dielectric A capacitor 20 having a film 17a and an upper electrode 18a, a fourth interlayer insulating film (second insulating film) 26 formed above the capacitor 20 and the first interlayer insulating film 11, and above the capacitor 20 and its periphery The metal pattern 31 is formed on the fourth interlayer insulating film 26 and has a stress in a direction opposite to that of the fourth interlayer insulating film 26. [Selection] Figure 13 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015227900-A |
| priorityDate | 2010-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.