http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010212670-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-942 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2010-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc08ddc6d66d2b1382be7470af1e3cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac |
| publicationDate | 2010-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010212670-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | A method for manufacturing a thin film transistor in which the number of photomasks used in a photolithography method is reduced is provided. A single crystal semiconductor layer is formed over a base substrate with a second insulating film, a first conductive film, and a first insulating film interposed between the first insulating film and the first crystalline semiconductor layer. An impurity element having one conductivity type is selectively introduced using the first resist mask 301, the first resist mask 301 is removed, a second conductive film 310 is formed over the single crystal semiconductor layer 220, and the first resist mask 301 is formed. A second resist mask 312 having a depression is formed using a multi-tone mask over the second conductive film 310, and the second conductive film 310, the single crystal semiconductor layer 220, and the second resist mask 312 are used. By performing first etching on the first insulating film 215, the first conductive film 202, and the second insulating film 201, and performing second etching with side etching on part of the first conductive film 202 Gate power Forming a pattern layer. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014072523-A |
| priorityDate | 2009-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.