| abstract |
The present invention provides a wafer level, chip scale semiconductor device packaging composition, and a method related thereto, which can provide high density, fine wiring without using photolithography. The wafer level package includes a stress buffer layer containing a polymer binder and a spinel crystal filler both in a deactivated and laser activated form. The stress buffer layer 105 can be patterned with a laser, thereby activating the filler and then the laser cutting path can be selectively metallized. [Selection] Figure 1 |