| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2009-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02d584c0c73c0e1ec66de42c18a84182 |
| publicationDate |
2010-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010206057-A |
| titleOfInvention |
Manufacturing method of semiconductor integrated circuit device |
| abstract |
The inventors of the present invention have clarified that it is difficult to reduce the contact resistance between a nickel-based metal silicide and a contact metal as the hole becomes finer. . According to one aspect of the present invention, in a method of manufacturing a semiconductor integrated circuit device having a MISFET in which source / drain regions and the like are subjected to silicidation with nickel-based metal silicide, the pre-metal insulating film is provided. Before forming the barrier metal in the contact hole, heat treatment is performed on the upper surface of the silicide film in a non-plasma reducing gas phase atmosphere containing a gas having a nitrogen-hydrogen bond as one of the main gas components. It is something to execute. [Selection] Figure 19 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013258245-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7286855-B2 |
| priorityDate |
2009-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |