| abstract |
The present invention provides a method for manufacturing a thin film transistor that has excellent device characteristic distribution of a TFT using a-IGZO as a channel layer and has reduced threshold voltage shift amount for a long-time operation. In a method of manufacturing a thin film transistor using an In-Ga-Zn-O-based amorphous oxide semiconductor film as a channel layer, water vapor and oxygen whose dew point temperature is controlled to 30 to 95 ° C after the channel layer is formed. A method of manufacturing a thin film transistor, comprising a step of heat-treating the amorphous oxide of the channel layer at a temperature of 200 to 500 ° C. in a mixed gas atmosphere. [Selection] Figure 2 |