http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010199525-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dafdb7339a37dbe001824e6ac1f54b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2009-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7aea9162af8028153bc1f3e1ee8efa61 |
| publicationDate | 2010-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010199525-A |
| titleOfInvention | Semiconductor manufacturing method |
| abstract | PROBLEM TO BE SOLVED: To provide a Ge semiconductor manufacturing method for self-organizing a germanium (Ge) semiconductor. A SiGe thin film composed of silicon (Si) and germanium (Ge) is solidified by melt growth to form a Ge high-concentration structure resulting from Ge segregation that appears in a self-organized manner in the crystallized SiGe thin film. To do. Furthermore, the Ge semiconductor manufacturing method characterized by raising Ge concentration using an oxidation concentration technique. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957547-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018519674-A |
| priorityDate | 2009-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.