http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010192753-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2009-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59d455cfb7f348a82d353c0c3c372ce6
publicationDate 2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010192753-A
titleOfInvention Insulated gate field effect transistor circuit
abstract A field effect transistor circuit that suppresses degradation of operating characteristics due to temperature changes is proposed. An insulated gate field effect transistor circuit according to an example of the present invention includes first source / drains 4S and 4D each having a diffusion layer, a first gate insulating film 2 provided on a channel region, A first field effect transistor Tr having a first gate electrode 3 provided on the first gate insulating film 2 and a second source / layer each having a metal layer forming a Schottky junction with the semiconductor substrate 1 Drains 14S, 14D, a second gate insulating film 12 provided on the channel region, and a second gate electrode 13 provided on the second gate insulating film 12, and the first drain 4D The second drain 14D is connected in parallel. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170080747-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102516656-B1
priorityDate 2009-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID414856
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID100328613
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID101844540
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID101825565
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID100062285
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14767304
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID13076
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID13077
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID100062244
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID1544
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID396052
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID678694
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID1543
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID503552
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID100135512
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID24297
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID396051
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID100686778
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID453744
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID24296
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID102130662
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID494010
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID282870
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426694112
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID140634
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID735881
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID102129994

Total number of triples: 44.