http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010184831-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-035
filingDate 2009-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010184831-A
titleOfInvention High purity polycrystalline silicon manufacturing method
abstract PROBLEM TO BE SOLVED: To effectively and economically reduce methane concentration in hydrogen gas when purifying exhaust gas discharged from a reaction furnace into hydrogen gas in the production of polycrystalline silicon by the Siemens method. SOLUTION: An exhaust gas A discharged from a reaction furnace 1 is passed through a condenser 2 to mainly condense and remove chlorosilanes in the exhaust gas A. Thereafter, the exhaust gas B that has passed through the condenser 2 is pressurized by the compressor 3, passed through the absorption tower 4 and the adsorption tower 6, and returned to the reaction tower 1 as purified hydrogen gas D. The capacity of the condenser 2 is increased by expansion or the like, the exhaust gas residence time is lengthened, and the dissolution of methane gas in the condensate is promoted, so that the methane concentration is reduced to 3/4 or less. Even when the methane concentration of the purified hydrogen gas D decreases and the methane concentration in the exhaust gas A is 15 ppm or more, the methane concentration of the purified hydrogen gas D can be made less than 1 ppm. [Selection] Figure 1
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