http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010182929-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2009-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b56b84ecbad60761f3945e2f80a80b85
publicationDate 2010-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010182929-A
titleOfInvention Method for manufacturing field effect transistor
abstract A field effect transistor in which erosion of a region continuous with an interface between a source electrode and a drain electrode in an active layer made of an amorphous oxide semiconductor is suppressed at least when configured as a field effect transistor. A manufacturing method is provided. According to a method for manufacturing a field effect transistor, after a first conductive layer is formed on an amorphous oxide semiconductor layer in a first conductive layer formation step, a pattern formation step and processing are performed. In the process, the resist pattern 30 is formed and the non-protection region by the resist pattern 30 is etched, whereby the amorphous oxide semiconductor layer 17 is processed together with the first conductive layer 20 to form the first pattern on the active layer 18. After the conductive layer 20 is laminated, the resist pattern 30 is peeled off from the first conductive layer 20. [Selection] Figure 4
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9991395-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019033171-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012174723-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017005279-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013149963-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014199921-A
priorityDate 2009-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.