http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010180078-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-035
filingDate 2009-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_083f8d05681a68d377c9c5cacaea822e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbbd0ef2f04946a9d42933b3efa7ec5f
publicationDate 2010-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010180078-A
titleOfInvention Production method of polycrystalline silicon
abstract Disclosed is a method for producing polycrystalline silicon in which a polycrystalline silicon rod can be easily taken out and productivity is improved. A U-shaped silicon core member having both ends connected to the electrode is disposed in a bell jar standing on a bottom wall substrate to which at least a pair of electrodes are attached. In a method for producing polycrystalline silicon in which a silicon rod is formed by depositing silicon on the silicon core material by chemical vapor deposition with at least silane gas supplied while energizing the material, a bell jar of the produced polycrystalline silicon rod Prior to taking out from the inside, the electrode bonded to the polycrystalline silicon rod is cooled, and thereafter, the polycrystalline silicon rod is broken near the root and taken out from the electrode. To do. [Selection] Figure 1
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Total number of triples: 55.