http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010177716-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate | 2010-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5bd1d442816c36fd07aba68944036a9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9f156130d57de966108c76aa5eb6c86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87215d8ad0e6ac8b1c7efe43adfeb0a9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d1447d690720b4b87d2ca0f2e84a1e9 |
| publicationDate | 2010-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010177716-A |
| titleOfInvention | Nitride semiconductor laser element, method for manufacturing the nitride semiconductor laser element, and optical apparatus using the nitride semiconductor laser element |
| abstract | A nitride semiconductor laser device having a low oscillation threshold current density and a high production yield is provided. An intermediate layer having a thickness of 20 nm to 150 nm is formed between and in contact with a light emitting layer having a quantum well structure and a p-type nitride semiconductor layer provided on the light emitting layer, and The intermediate layer includes a first nitride semiconductor layer to which silicon is added, and an undoped second nitride semiconductor layer that is in contact between the first nitride semiconductor layer and the p-type nitride semiconductor layer. And a nitride semiconductor laser device having at least. [Selection] Figure 1 |
| priorityDate | 2010-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.