| abstract |
The object of the present invention is to remove Si wafer processing damage by realizing wet etching with mixed acid that achieves a surface condition of about ± 5% of the etching amount and a surface state that does not roughen at an etching rate in the range of 10 to 60 μm / min. Providing a method. The Si wafer processing damage removal method of the present invention spins the Si wafer, and discharges the chemical solution from the nozzle to the spinning Si wafer, so that the micro-cracking of the Si wafer caused by the processing by the grindstone or Processing damage such as defects is removed, and the chemical solution is 4.45 wt% to 24.5 wt% hydrogen fluoride, 31.5 wt% to 54.09 wt% nitric acid, 5 wt% to 13.64 wt% acetic acid. It is characterized by including. [Selection] FIG. |