http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010177365-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9a9aad45e5465bd5d3e7e503b2b16c65 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2009-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_629a2ed7d02b79929cb93ba33d1000b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbcd6d6c10ede973c4226a55a43c7d37 |
| publicationDate | 2010-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010177365-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | To improve yield in a method for manufacturing a semiconductor device. A step of forming a first wiring made of metal above a silicon substrate, a step of forming an interlayer insulating film on the first wiring, and a surface of the first wiring are formed. A step of forming an exposed opening 69a in the interlayer insulating film 69; a step of forming a barrier metal film 72 for suppressing diffusion of the metal on the inner surface of the opening 69a and the surface of the interlayer insulating film 69; Forming a first conductive film 73 on the surface, polishing the surface of the first conductive film 73 by a chemical mechanical polishing method to expose the surface of the barrier metal film 72, and the first of the openings 69a. A step of forming a second conductive film 80 on the conductive film 73 and the barrier metal film 72; and the second conductive film 80 is selectively removed leaving a region enlarged from the opening 69a; Forming a wiring 80a of By the method of manufacturing a semiconductor device that. [Selection] Figure 19 |
| priorityDate | 2009-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.