http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010174378-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_118b70392921838b134daba3ceb26430
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58
filingDate 2010-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60b67c3204eb339fce9e01a3ac289aef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46967246ed2250dc14b10f1244a33721
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publicationDate 2010-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010174378-A
titleOfInvention Thin film formation method
abstract Provided is a thin film forming method capable of forming a film by generating stable plasma with high efficiency. A thin film forming method using a thin film forming apparatus comprising: a vacuum vessel 11 that maintains a vacuum inside; and plasma generating means that is connected to the vacuum vessel and generates plasma in an antenna housing chamber 80A. In the thin film forming method, the inside of the vacuum vessel is evacuated and the inside of the antenna accommodating chamber is decompressed to a vacuum state lower than the vacuum vessel to 10 −3 Pa or less, and a high frequency voltage is applied to the antenna 85a. And applying plasma to generate a plasma inside the vacuum vessel and plasma-treating the thin film formed in the vacuum vessel. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7341584-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7335495-B2
priorityDate 2010-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0382779-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07226383-A
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Total number of triples: 21.