http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010171262-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12
filingDate 2009-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cacdfad87707f3652d4d2a5c13b892c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecbce3ae4664e56c5cdc5ac7abcd7a77
publicationDate 2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010171262-A
titleOfInvention Method for manufacturing semiconductor laser and semiconductor laser
abstract A method of manufacturing a semiconductor laser capable of simplifying the formation of a structure for confining current and a semiconductor laser are provided. In the method of the present invention, an n-type cladding layer and a first optical confinement layer are grown on a substrate, a multiple quantum well structure, a second optical confinement layer, and an AlInAs semiconductor carrier stop layer. A plurality of semiconductor thin wires 16 made of 21 are grown using a mask and a growth furnace, the substrate is taken out of the growth furnace, the mask is removed, and the first optical confinement layer 15 is covered on at least the side surface of the carrier stop layer 21. A semi-insulating semiconductor layer 23 made of an InP semiconductor is grown, the semi-insulating semiconductor layer 23 is etched to expose the upper surface of the carrier stop layer 21, and a p-type cladding layer 25 is grown. In this method, the semi-insulating semiconductor layer 23 between the semiconductor thin wires 16 is grown together with the semi-insulating semiconductor layer 23 for current confinement. [Selection] Figure 1
priorityDate 2009-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 17.