http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010171237-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cdd94f212dc7aef02fc1dcf28fa9b4fd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2009-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfdc7a8c30201556132a127da945bacf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b05082dae3c8c684c121892d466f2c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50673be1a9c5c7e800a0ea7e27758b40 |
| publicationDate | 2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010171237-A |
| titleOfInvention | Metal oxide semiconductor, manufacturing method thereof, and thin film transistor using the same |
| abstract | A metal oxide semiconductor capable of being manufactured at a low process temperature and capable of realizing a thin film transistor having high carrier mobility and high current on / off ratio, a method for manufacturing the metal oxide semiconductor, and the metal oxide semiconductor. A thin film transistor. A metal oxide semiconductor 306 formed on a substrate 301, which is produced by converting a film 306 ′ of a metal oxide precursor containing a surfactant. Semiconductor 306. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012174718-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8753920-B2 |
| priorityDate | 2009-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 129.