http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010171179-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc45703f67bc72a6db582867886fd5d5
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
filingDate 2009-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5e099bd6e0493a23003d0e82325ba0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59351d273b3b3219c97ef696d9d12917
publicationDate 2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010171179-A
titleOfInvention Semiconductor device
abstract PROBLEM TO BE SOLVED: To provide a semiconductor device in which an IGBT and a diode are formed on one semiconductor substrate, the IGBT having a high short-circuit withstand capability and a small loss when the diode is energized. A semiconductor device having a semiconductor substrate on which an IGBT region and a diode region are formed. The IGBT region is formed with an emitter region and a body region facing the first surface of the semiconductor substrate, and a collector region facing the second surface of the semiconductor substrate. In the diode region, a diode is formed in which the anode region faces the first surface of the semiconductor substrate and the cathode region faces the second surface of the semiconductor substrate. A thin plate portion having a thickness of the semiconductor substrate thinner than the thickness of the semiconductor substrate in the IGBT region is formed in the diode region. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020194949-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9166018-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7338242-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012151470-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012079945-A
priorityDate 2009-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449266279
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15913

Total number of triples: 21.