http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010171179-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc45703f67bc72a6db582867886fd5d5 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate | 2009-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5e099bd6e0493a23003d0e82325ba0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59351d273b3b3219c97ef696d9d12917 |
publicationDate | 2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2010171179-A |
titleOfInvention | Semiconductor device |
abstract | PROBLEM TO BE SOLVED: To provide a semiconductor device in which an IGBT and a diode are formed on one semiconductor substrate, the IGBT having a high short-circuit withstand capability and a small loss when the diode is energized. A semiconductor device having a semiconductor substrate on which an IGBT region and a diode region are formed. The IGBT region is formed with an emitter region and a body region facing the first surface of the semiconductor substrate, and a collector region facing the second surface of the semiconductor substrate. In the diode region, a diode is formed in which the anode region faces the first surface of the semiconductor substrate and the cathode region faces the second surface of the semiconductor substrate. A thin plate portion having a thickness of the semiconductor substrate thinner than the thickness of the semiconductor substrate in the IGBT region is formed in the diode region. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020194949-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9166018-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7338242-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012151470-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012079945-A |
priorityDate | 2009-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449266279 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15913 |
Total number of triples: 21.