| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9a9aad45e5465bd5d3e7e503b2b16c65 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2009-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68406a2a90825312fd3d39c117905177
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cbd9e294d080c6751c53a9fc04775e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edf14ef2bb1e67bd439924f2cc6431cf |
| publicationDate |
2010-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010165705-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To make an equivalent oxide film thickness difficult when an alumina film is stacked on a gate insulating film made of hafnium silicate. In addition, when Al diffuses into the gate insulating film made of hafnium silicate, the hole mobility decreases. An insulating film (16) containing Hf and O is formed on a semiconductor substrate (10). A cap film (17) containing oxygen and titanium as constituent elements is formed on the insulating film. The gate insulating film (18) is formed by heat-treating the insulating film and the cap film in a nitrogen gas or rare gas atmosphere to diffuse titanium in the cap film into the insulating film. A gate electrode film (19) is formed on the gate insulating film. [Selection] Figure 1-2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013035561-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048307-B2 |
| priorityDate |
2009-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |