| abstract |
A photoresist underlayer film forming material comprising a novolak resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof. [Effect] The photoresist underlayer film forming material of the present invention has an absorption coefficient sufficient to exhibit a sufficient antireflection effect at a film thickness of 200 nm or more by combining with an intermediate layer having an antireflection effect if necessary. The etching rate of CF 4 / CHF 3 -based gas and Cl 2 / BCl 3 -based gas used for processing is stronger than ordinary m-cresol novolac resin, and has high etching resistance. Moreover, it is excellent in resistance to contamination (poisoning resistance) from a porous low dielectric constant film adsorbing a basic substance, and the resist shape after patterning is also good. [Selection figure] None |