http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010129981-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e2e91fe0e2b9cd6fbbdebe5a7d9045f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2008-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31ece9ca3a05c4cf9552857604cf6af7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aad8771c373b22ac321699c8eb5ee74e |
| publicationDate | 2010-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010129981-A |
| titleOfInvention | Epitaxial wafer manufacturing method |
| abstract | A technique capable of effectively reducing adhesion of by-products to a reaction furnace is provided. In an epitaxial wafer manufacturing method in which a wafer W to be processed is accommodated in a reaction furnace 1 and an epitaxial layer is vapor-grown on the wafer W to form an epitaxial wafer, a tri-layer for forming the epitaxial layer on the wafer W is provided. In a vapor phase growth process in which chlorosilane (TCS) is supplied and vapor phase growth is performed, hydrogen chloride is supplied together with trichlorosilane. Thereby, the by-product adhering in a furnace during a vapor phase growth process can be reduced. For this reason, it is possible to reduce the necessity of removing by-products after the vapor phase growth step, to reduce the frequency of removing by-products, and to improve productivity. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111261497-A |
| priorityDate | 2008-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.