| abstract |
Polishing for metal that enables rapid fabrication of an LSI with a high level of fineness, less dishing, less erosion of fine wiring, and improved flatness. The present invention provides a chemical mechanical polishing method that provides a liquid and uses it to obtain high productivity even with a large-sized substrate. (A) Nonionic surfactant having a poly (oxyalkylene) group in the molecule and an HLB value in the range of 12 to 18, (B) sucrose fatty acid ester and alkyl (poly) Chemical mechanical planarization of a semiconductor device containing at least one nonionic surfactant selected from the group consisting of glucoside, (C) an oxidizing agent, (D) an organic acid, and (E) a heterocyclic compound Polishing liquid for metal. [Selection figure] None |