http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010126392-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 2008-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9a74e1511ff7f7e06640895dcdf7655 |
| publicationDate | 2010-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010126392-A |
| titleOfInvention | Method for producing nitride single crystal |
| abstract | PROBLEM TO BE SOLVED: To provide a method for producing a nitride single crystal capable of obtaining a nitride single crystal substrate having a large diameter. A nitride single crystal manufacturing method for producing a bulk nitride single crystal 7 on a seed substrate 5 by vapor phase epitaxy, the step of heating the seed substrate 5, and the seed substrate 5 comprising: While rotating, the source gas is supplied to the seed substrate 5 from a direction A parallel or inclined with respect to the seed substrate 5, and the same source gas as the source gas is supplied from a direction B different from the direction A with respect to the seed substrate 5. Supplying to the seed substrate 5. [Selection] Figure 2 |
| priorityDate | 2008-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.