http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010124002-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58b1fe6e24bc6d4fb99f863b7f17fcfe
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
filingDate 2010-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e5bd68fbf5657bf7abf75bed37eea28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4eafc028b6568c2f38feaf642e1becb
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publicationDate 2010-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010124002-A
titleOfInvention Semiconductor laser element
abstract An object of the present invention is to obtain a highly reliable ridge type semiconductor laser device and optical module. In a ridge type semiconductor laser device, a p-side electrode has a first conductor layer region and an upper second conductor layer region. Then, at least one end face of the second conductor layer region is set inside the reflection end face. The structure is such that distortion due to the stress caused by the electrode with respect to the element end face is reduced, and at the same time, no supersaturated absorption occurs. According to the present invention, a highly reliable ridge type semiconductor laser can be obtained. An optical module using such a semiconductor laser element is extremely reliable. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014145973-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9225146-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012256712-A
priorityDate 2010-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4504610-B2
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Total number of triples: 24.