| abstract |
An SOI substrate having excellent mechanical strength and a method for manufacturing the SOI substrate are provided. By irradiating the single crystal semiconductor substrate with accelerated hydrogen ions, an embrittled region is formed at a predetermined depth from the surface of the single crystal semiconductor substrate, and the single crystal semiconductor substrate and the base substrate are formed. Bonding through an insulating layer, heating a single crystal semiconductor substrate, and separating with the embrittlement region as a boundary, a semiconductor layer is formed on the base substrate through the insulating layer, and laser light is applied to the surface of the semiconductor layer. When at least the surface layer portion of the semiconductor layer is melted by irradiation, at least one of nitrogen, oxygen, and carbon is dissolved in the semiconductor layer. [Selection] Figure 1 |