http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010123893-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
filingDate 2008-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8fa7bbba7524654a11cf5d4d23d294d
publicationDate 2010-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010123893-A
titleOfInvention Etching method and apparatus
abstract Etching is performed in a gas phase without generating plasma that damages the substrate. Tetrafluoroethylene gas and ozone gas are supplied to a chamber 2 storing a substrate 10 used for removing silicon oxide 101 at room temperature under a pressure lower than atmospheric pressure. The ozone gas is supplied from the ozone generator 4. The ozone generator 4 liquefies and separates only ozone from the ozone-containing gas based on the difference in vapor pressure and then vaporizes it again to obtain ultra-high concentration ozone gas. The chamber 2 may have a mixing chamber and a processing chamber. The mixing chamber and the processing chamber are formed by partitions that divide the chamber 2 into two upper and lower chambers. Tetrafluoroethylene gas and ozone gas are provided in the mixing chamber. The mixed gas of tetrafluoroethylene and ozone in the mixing chamber moves to the processing chamber in which the substrate 10 is stored. The partition includes a shower head for transferring the gas in the mixing chamber to the processing chamber. The shower head is formed by forming a plurality of holes in the partition. [Selection] Figure 1
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