| abstract |
The present invention provides a laser annealing apparatus and a laser annealing method capable of performing uniform and uniform laser annealing on large mother glass. A plurality of laser oscillators 101 that continuously oscillate visible light, and a plurality of optical fibers 102 connected to the plurality of laser oscillators, one end of each optical fiber being connected to each laser oscillator, The amorphous silicon semiconductor film is deposited on the surface of the fiber array 103 on which the other end of each of the plurality of optical fibers is disposed, and the laser light emitted from the exit surface of the other end of the optical fiber disposed on the fiber array. The optical system 104 is shaped linearly on the irradiation surface of the substrate 105, and the mechanism relatively scans the linear beam and the substrate. Using this laser annealing apparatus, the amorphous silicon semiconductor film on the substrate is laser annealed to form a crystalline silicon semiconductor film. [Selection] Figure 1 |