http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010114470-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
filingDate 2010-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35f1c40ad505e5fe027dac9790bac674
publicationDate 2010-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010114470-A
titleOfInvention Wafer batch contact board
abstract Provided are a wafer batch contact board that is resistant to high-frequency noise and has improved high-frequency characteristics, a method of manufacturing the same, and the like. In a wafer batch contact board used for collectively testing a plurality of semiconductor devices formed on a wafer, The GND wiring or the power supply wiring (GND pad 12c or power supply pad 12a) in the multilayer wiring substrate 10 is connected to the conductive patterns 35 ′ and 35 on the surface of the insulating film 32 of the contact component 30. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023100708-A1
priorityDate 2010-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.