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filingDate 2009-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e4a92975e96aac2e5a3e6af1bf3957b
publicationDate 2010-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010109370-A
titleOfInvention Polishing both sides of a semiconductor wafer
abstract A novel polishing method is provided that meets the technical requirements of the future generation of 22 nm and is suitable for the new generation of 450 mm wafers. The back surface of a semiconductor wafer is polished with a polishing pad containing abrasive grains fixed in the polishing pad, and the front surface of the semiconductor wafer is roughly polished with a polishing pad containing abrasive grains fixed in the polishing pad. , Removing micro roughness and micro damage from the front surface of the semiconductor wafer by polishing the front surface of the semiconductor wafer with the polishing pad, and polishing the front surface of the semiconductor wafer with the polishing pad not containing abrasive grains fixed in the polishing pad. Finish polishing with front polishing. [Effect] It is suitable for improvement of local geometry in the end face exclusion region. [Selection figure] None
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