http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010109290-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate | 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9366d564e31c4c7aab4f4ab13f818a7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00481e558699756a1a3320b763adc74a |
publicationDate | 2010-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2010109290-A |
titleOfInvention | Semiconductor device manufacturing method and semiconductor device |
abstract | Disclosed is a method for manufacturing a semiconductor device having a polysilicon semiconductor thin film in which laser activation of a polysilicon semiconductor thin film can be performed uniformly without increasing the number of processes and contamination during laser activation is prevented. . In order to form a polysilicon semiconductor thin film 13 on a substrate 10, and to form a channel region 13c, a source side diffusion region 13s and a drain side diffusion region 13d in the polysilicon semiconductor thin film 13 (21p), A step of forming a mask 23 on the polysilicon semiconductor thin film 13 (21p), and ion implantation 24 from above the mask 23 to form a source side diffusion region 13s and a drain side diffusion region 13d in the polysilicon semiconductor thin film 13 (21p). A step of removing the mask 23, a step of forming the silicon thin film 25 on the polysilicon semiconductor thin film 13 (21p) from which the mask 23 has been removed, and a polysilicon by irradiating a laser 26 from above the silicon thin film 25. And a step of activating the semiconductor thin film 13 (21p). [Selection] Figure 1 |
priorityDate | 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.