http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010109290-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9366d564e31c4c7aab4f4ab13f818a7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00481e558699756a1a3320b763adc74a
publicationDate 2010-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010109290-A
titleOfInvention Semiconductor device manufacturing method and semiconductor device
abstract Disclosed is a method for manufacturing a semiconductor device having a polysilicon semiconductor thin film in which laser activation of a polysilicon semiconductor thin film can be performed uniformly without increasing the number of processes and contamination during laser activation is prevented. . In order to form a polysilicon semiconductor thin film 13 on a substrate 10, and to form a channel region 13c, a source side diffusion region 13s and a drain side diffusion region 13d in the polysilicon semiconductor thin film 13 (21p), A step of forming a mask 23 on the polysilicon semiconductor thin film 13 (21p), and ion implantation 24 from above the mask 23 to form a source side diffusion region 13s and a drain side diffusion region 13d in the polysilicon semiconductor thin film 13 (21p). A step of removing the mask 23, a step of forming the silicon thin film 25 on the polysilicon semiconductor thin film 13 (21p) from which the mask 23 has been removed, and a polysilicon by irradiating a laser 26 from above the silicon thin film 25. And a step of activating the semiconductor thin film 13 (21p). [Selection] Figure 1
priorityDate 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 27.