http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010109072-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2008-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be056f4bad25717783bc2f6f88551abe |
| publicationDate | 2010-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010109072-A |
| titleOfInvention | Semiconductor device manufacturing method, semiconductor device test method, semiconductor device test apparatus, and semiconductor device |
| abstract | A semiconductor device manufacturing method, a semiconductor device test method, a semiconductor device test apparatus, and a semiconductor device, and a method for estimating a factor of a change in contact force between a pad of the semiconductor device and a probe of the test device. A step of forming a strain sensor for measuring the magnitude of strain on a silicon substrate, a step of forming a test pad on the silicon substrate, and a lifting stage of the test apparatus raise the silicon substrate. And a step of estimating the state of the test probe 8 based on the time when the test probe 8 and the test pad 41 of the test apparatus 1 are in contact with each other and the increase rate of the strain after the contact. by. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102818980-A |
| priorityDate | 2008-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 14.