abstract |
An insulating film that can be suitably used in a semiconductor element or the like for which high integration and multilayering are desired, and can be used to form an insulating film having a low relative dielectric constant and excellent mechanical strength and processing resistance. A composition for forming, an insulating film and a method for forming the same are provided. A composition for forming an insulating film includes a hydrolysis condensate obtained by hydrolytic condensation of a silane compound containing a compound 1 represented by the following general formula (1), and an organic solvent. R 1 b (R 2 O) 3-b Si-CH 2 -Si (OR 3) 3-c R 4 c ····· (1) (In the formula, R 1 to R 4 are the same or different and each represents a monovalent organic group, and b and c are the same or different and represent a number of 0 to 1.) [Selection figure] None |