http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010093275-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2009-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0459559e048d78c0cee19a9e9914e78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82d7ec343f8f9b0415970bc6b6c443cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d |
| publicationDate | 2010-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010093275-A |
| titleOfInvention | Method for fabricating p-type gallium nitride based semiconductor, method for fabricating nitride based semiconductor element, and method for fabricating epitaxial wafer |
| abstract | A method of manufacturing a p-type gallium nitride semiconductor capable of providing a gallium nitride semiconductor containing a p-type dopant without performing activation annealing is provided. A GaN-based semiconductor region containing a p-type dopant is formed on a support in a growth furnace. An organometallic raw material and ammonia are supplied to the growth reactor 10 to grow a GaN-based semiconductor layer 17 on the GaN-based semiconductor layer 15. A p-type dopant is added to the GaN-based semiconductor, and the p-type dopant is, for example, magnesium. After the formation of the GaN-based semiconductor regions 15 and 17, an atmosphere 19 containing at least one of monomethylamine and monoethylamine is formed in the growth reactor 10. After the atmosphere 19 is provided, the substrate temperature is lowered from the growth temperature of the GaN-based semiconductor region 17. When the film formation is completed and the substrate temperature is lowered to near room temperature, the production of the p-type GaN-based semiconductor 17a and the epitaxial wafer E is completed. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015515145-A |
| priorityDate | 2009-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.